Abstract
Amorphous Bi-Fe-Ox films prepared on SrTiO3 (100) substrates using a conventional r. f. magnetron sputtering system were crystallized by post-annealing at 873K in an atmosphere. Microstructural observations by X-ray diffraction and cross-sectional transmission electron microscopy revealed that the crystallized Bi-Fe-Ox films were well-epitaxially BiFeO3 fabricated without interfacial layer although as-prepared film was amorphous structure with excess Bi. The crystallized BiFeO3 films have fairly epitaxial compatibly ([001](001)BiFeO 3//[001](001)SrTiO3). These results indicate that (1) BiFeO3 has good epitaxial compatibility with SrTiO3 and (2) crystallizing amorphous Bi-Fe-Ox is one possible method that can be used to fabricate high-quality multiferroic barriers for tunnel junctions.
Original language | English |
---|---|
Pages (from-to) | 648-651 |
Number of pages | 4 |
Journal | Journal of the Ceramic Society of Japan |
Volume | 118 |
Issue number | 1380 |
DOIs | |
Publication status | Published - 2010 Aug |
Keywords
- BiFeO
- Epitaxial film
- Multiferroics
- SrTiO
- Transmission electron microscopy (TEM)
ASJC Scopus subject areas
- Ceramics and Composites
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry