Structural characteristics and resistive switching properties of thermally prepared TiO2 thin films

Xun Cao, Xiaomin Li, Weidong Yu, Yiwen Zhang, Rui Yang, Xinjun Liu, Jingfang Kong, Wenzhong Shen

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


Polycrystalline TiO2 thin films were formed on Pt(1 1 1)/Ti/SiO2/Si by thermal oxidation of Ti films with temperatures ranging from 600 °C to 800 °C. Results of Raman spectra testing indicate that the structure of the oxidized TiO2 films is rutile phase. The resistance switching behaviors (RSB) have been confirmed in Pt/TiO2/Pt structures. A stable RSB with a narrow dispersion of the resistance states and switching voltages was observed in the sample fabricated with the oxidation temperature of 600 °C. The resistance ratios of high resistance states to low resistance states are larger than 103 with the set and reset voltage as low as 2.5 V and 0.6 V, respectively.

Original languageEnglish
Pages (from-to)458-461
Number of pages4
JournalJournal of Alloys and Compounds
Issue number1-2
Publication statusPublished - 2009 Nov 3


  • Oxidation
  • Oxide materials
  • Resistive switching
  • Thin films

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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