Structural change of atomic-order nitride formed on Si1 - xGex(100) and Ge(100) by heat treatment

Nao Akiyama, Masao Sakuraba, Bernd Tillack, Junichi Murota

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Thermal stability of atomic-order nitrided Si(100), Si0.6Ge0.4(100) and Ge(100) formed in NH3 gas environment at 400 °C and structural change of the nitrided surface were investigated. It was found that N atom amount on Ge(100) tends to decrease at higher heat-treatment temperatures above 400 °C. Especially with H2 heat treatment, the N atom amount on Ge(100) becomes below detection limit for X-ray photoelectron spectroscopy measurement. On the other hand, it was confirmed that the N atom amount on Si(100) and Si0.6Ge0.4(100) is almost independent of heat-treatment conditions in the temperature range of 400-700 °C. From the change of chemically shifted components in Si 2p and Ge 3d spectra for Si0.6Ge0.4(100), it is suggested that N atoms bound to Ge atoms tend to be transferred to Si atoms at higher heat-treatment temperatures above 400 °C.

Original languageEnglish
Pages (from-to)219-221
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 2008 Nov 3

Keywords

  • Ge
  • Heat treatment
  • Si
  • SiGe
  • Thermal nitridation
  • Thermal stability
  • X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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