Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas-source MBE using RHEED in situ monitoring

H. Ohumura; K. Balakrishnan; G. Feuillet; K. Ohta; H. Hamaguchi; S. Chichibu; Y. Ishida; S. Yoshida

Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas-source MBE using RHEED in situ monitoring

H. Ohumura, K. Balakrishnan, G. Feuillet, K. Ohta, H. Hamaguchi, S. Chichibu, Y. Ishida, S. Yoshida

Research output: Contribution to journal › Conference article › peer-review

Abstract

By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.

Original language	English
Pages (from-to)	435-440
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	449
Publication status	Published - 1997 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas-source MBE using RHEED in situ monitoring. / Ohumura, H.; Balakrishnan, K.; Feuillet, G.; Ohta, K.; Hamaguchi, H.; Chichibu, S.; Ishida, Y.; Yoshida, S.

In: Materials Research Society Symposium - Proceedings, Vol. 449, 01.01.1997, p. 435-440.

Research output: Contribution to journal › Conference article › peer-review

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title = "Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas-source MBE using RHEED in situ monitoring",

abstract = "By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.",

author = "H. Ohumura and K. Balakrishnan and G. Feuillet and K. Ohta and H. Hamaguchi and S. Chichibu and Y. Ishida and S. Yoshida",

year = "1997",

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language = "English",

volume = "449",

pages = "435--440",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 05-12-1996",

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TY - JOUR

T1 - Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas-source MBE using RHEED in situ monitoring

AU - Ohumura, H.

AU - Balakrishnan, K.

AU - Feuillet, G.

AU - Ohta, K.

AU - Hamaguchi, H.

AU - Chichibu, S.

AU - Ishida, Y.

AU - Yoshida, S.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.

AB - By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.

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M3 - Conference article

AN - SCOPUS:0030677106

VL - 449

SP - 435

EP - 440

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 5 December 1996

ER -

Structural and optical characterization of high-quality cubic GaN epilayers grown on GaAs and 3C-SiC substrates by gas-source MBE using RHEED in situ monitoring

Abstract

ASJC Scopus subject areas

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