Abstract
By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.
Original language | English |
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Pages (from-to) | 435-440 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 449 |
Publication status | Published - 1997 Jan 1 |
Externally published | Yes |
Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 5 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering