Structural and magnetic properties of L10-FePd/MgO films on GaAs and InP lattice mismatched substrates

M. Kohda; S. Iimori; R. Ohsugi; H. Naganuma; T. Miyazaki; Y. Ando; J. Nitta

doi:10.1063/1.4795443

Structural and magnetic properties of L1₀-FePd/MgO films on GaAs and InP lattice mismatched substrates

M. Kohda, S. Iimori, R. Ohsugi, H. Naganuma, T. Miyazaki, Y. Ando, J. Nitta

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Structural and magnetic properties of epitaxial L1₀-FePd/MgO films on GaAs and InP lattice mismatched substrates are investigated at different MgO and FePd growth temperatures. While c-axis lattice constants of MgO and FePd show similar values on both substrates, the remanent magnetization becomes larger on GaAs than that on InP. Since the ratio of FePd (002) tetragonal ordered phase and FePd (200) cubic disordered phase follows similar growth temperature dependence to the remanent magnetization and the long range chemical order parameter, the perpendicular magnetic anisotropy grown on the lattice-mismatched semiconductors is strongly affected by formation of the disordered phase.

Original language	English
Article number	102411
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4795443
Publication status	Published - 2013 Mar 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Structural and magnetic properties of L10-FePd/MgO films on GaAs and InP lattice mismatched substrates",

abstract = "Structural and magnetic properties of epitaxial L10-FePd/MgO films on GaAs and InP lattice mismatched substrates are investigated at different MgO and FePd growth temperatures. While c-axis lattice constants of MgO and FePd show similar values on both substrates, the remanent magnetization becomes larger on GaAs than that on InP. Since the ratio of FePd (002) tetragonal ordered phase and FePd (200) cubic disordered phase follows similar growth temperature dependence to the remanent magnetization and the long range chemical order parameter, the perpendicular magnetic anisotropy grown on the lattice-mismatched semiconductors is strongly affected by formation of the disordered phase.",

author = "M. Kohda and S. Iimori and R. Ohsugi and H. Naganuma and T. Miyazaki and Y. Ando and J. Nitta",

note = "Funding Information: We thank Professor Seki and Professor Takanashi for PMOKE measurement and useful discussions. This work was supported in part by Grant for Advanced Industrial Technology Development from NEDO, by the Japan Science and Technology Agency (JST) through its Strategic International Cooperative Program under the title “Advanced spintronic materials and transport phenomena (ASPIMATT)” and by the Mayekawa Foundation. ",

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T1 - Structural and magnetic properties of L10-FePd/MgO films on GaAs and InP lattice mismatched substrates

AU - Kohda, M.

AU - Iimori, S.

AU - Ohsugi, R.

AU - Naganuma, H.

AU - Miyazaki, T.

AU - Ando, Y.

AU - Nitta, J.

N1 - Funding Information: We thank Professor Seki and Professor Takanashi for PMOKE measurement and useful discussions. This work was supported in part by Grant for Advanced Industrial Technology Development from NEDO, by the Japan Science and Technology Agency (JST) through its Strategic International Cooperative Program under the title “Advanced spintronic materials and transport phenomena (ASPIMATT)” and by the Mayekawa Foundation.

PY - 2013/3/11

Y1 - 2013/3/11

N2 - Structural and magnetic properties of epitaxial L10-FePd/MgO films on GaAs and InP lattice mismatched substrates are investigated at different MgO and FePd growth temperatures. While c-axis lattice constants of MgO and FePd show similar values on both substrates, the remanent magnetization becomes larger on GaAs than that on InP. Since the ratio of FePd (002) tetragonal ordered phase and FePd (200) cubic disordered phase follows similar growth temperature dependence to the remanent magnetization and the long range chemical order parameter, the perpendicular magnetic anisotropy grown on the lattice-mismatched semiconductors is strongly affected by formation of the disordered phase.

AB - Structural and magnetic properties of epitaxial L10-FePd/MgO films on GaAs and InP lattice mismatched substrates are investigated at different MgO and FePd growth temperatures. While c-axis lattice constants of MgO and FePd show similar values on both substrates, the remanent magnetization becomes larger on GaAs than that on InP. Since the ratio of FePd (002) tetragonal ordered phase and FePd (200) cubic disordered phase follows similar growth temperature dependence to the remanent magnetization and the long range chemical order parameter, the perpendicular magnetic anisotropy grown on the lattice-mismatched semiconductors is strongly affected by formation of the disordered phase.

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