Epitaxially grown Mn2VAl full-Heusler thin films were fabricated on single crystalline MgO (001) substrates by using an ultra-high-vacuum magnetron sputtering technique. X-ray diffraction revealed that epitaxial Mn2VAl films with a highly L21-ordered structure were obtained by annealing around 600 °C. For the films deposited without a buffer layer and annealed at 500 °C-600 °C, the saturation magnetization was about 240 emu;cm3 at 300 K, which was close to the theoretical value. The effective magnetic damping constant of Mn2VAl thin films was investigated using the ferromagnetic resonance technique. The effective damping constant was much larger than expected due to the inhomogeneity in the Mn2VAl films.
- Heusler alloys
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering