Epitaxial growth of non-polar wurtzite (1120) A1N thin films was achieved on a Si(100) substrate by inserting an MnS buffer layer. The a-plane AlN film and MnS buffer layer were fabricated by pulsed KrF excimer laser deposition, and their micro- and interfacial atomic structures were investigated by transmission electron microscopy. The epitaxial relationship between films and substrate was found to be AlN(1120) ∥ MnS(100) ∥ Si(100) with in-plane alignment of AlN ∥ MnS ∥ Si. AlN grown on Si is perpendicular to A1N and parallel to MnS. The MnS/Si interface is abrupt enough to inherit the orientation of the Si(100) surface. A sharp interface was also observed for AlN/MnS without any intermediate layer.
|Number of pages||4|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2004 Aug 1|
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)