Structural and electronic properties of anatase Ti1-xFe xO2-δ thin film prepared by RF magnetron sputtering

K. Usui, T. Okumura, E. Sakai, H. Kumigashira, T. Higuchi

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1 Citation (Scopus)


Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub 300 ∼ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spectra exhibit that Ti 3d-band occupancy is increased as a result of the oxygen vacancies. The thin film prepared at 500°C has the Ti 3d -DOS at the Fermi level. These findings indicate that Ti 3d electrons created by the oxygen vacancies contribute to the electrical conductivity.

Original languageEnglish
Article number012001
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 2014
Externally publishedYes
Event1st Conference on Light and Particle Beams in Materials Science 2013, LPBMS 2013 - Tsukuba, Japan
Duration: 2013 Aug 292013 Aug 31

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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