TY - JOUR
T1 - Structural and electronic properties of anatase Ti1-xFe xO2-δ thin film prepared by RF magnetron sputtering
AU - Usui, K.
AU - Okumura, T.
AU - Sakai, E.
AU - Kumigashira, H.
AU - Higuchi, T.
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub 300 ∼ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spectra exhibit that Ti 3d-band occupancy is increased as a result of the oxygen vacancies. The thin film prepared at 500°C has the Ti 3d -DOS at the Fermi level. These findings indicate that Ti 3d electrons created by the oxygen vacancies contribute to the electrical conductivity.
AB - Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub 300 ∼ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spectra exhibit that Ti 3d-band occupancy is increased as a result of the oxygen vacancies. The thin film prepared at 500°C has the Ti 3d -DOS at the Fermi level. These findings indicate that Ti 3d electrons created by the oxygen vacancies contribute to the electrical conductivity.
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U2 - 10.1088/1742-6596/502/1/012001
DO - 10.1088/1742-6596/502/1/012001
M3 - Conference article
AN - SCOPUS:84899646587
VL - 502
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012001
T2 - 1st Conference on Light and Particle Beams in Materials Science 2013, LPBMS 2013
Y2 - 29 August 2013 through 31 August 2013
ER -