Structural and electronic properties of anatase Ti1-xFe xO2-δ thin film prepared by RF magnetron sputtering

K. Usui; T. Okumura; E. Sakai; H. Kumigashira; T. Higuchi

doi:10.1088/1742-6596/502/1/012001

Structural and electronic properties of anatase Ti_1-xFe _xO_2-δ thin film prepared by RF magnetron sputtering

K. Usui, T. Okumura, E. Sakai, H. Kumigashira, T. Higuchi

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub 300 ∼ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spectra exhibit that Ti 3d-band occupancy is increased as a result of the oxygen vacancies. The thin film prepared at 500°C has the Ti 3d -DOS at the Fermi level. These findings indicate that Ti 3d electrons created by the oxygen vacancies contribute to the electrical conductivity.

Original language	English
Article number	012001
Journal	Journal of Physics: Conference Series
Volume	502
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/502/1/012001
Publication status	Published - 2014
Externally published	Yes
Event	1st Conference on Light and Particle Beams in Materials Science 2013, LPBMS 2013 - Tsukuba, Japan Duration: 2013 Aug 29 → 2013 Aug 31

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{b988dba008ae4a7cbbfc513fadfa9e18,

title = "Structural and electronic properties of anatase Ti1-xFe xO2-δ thin film prepared by RF magnetron sputtering",

abstract = "Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub 300 ∼ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spectra exhibit that Ti 3d-band occupancy is increased as a result of the oxygen vacancies. The thin film prepared at 500°C has the Ti 3d -DOS at the Fermi level. These findings indicate that Ti 3d electrons created by the oxygen vacancies contribute to the electrical conductivity.",

author = "K. Usui and T. Okumura and E. Sakai and H. Kumigashira and T. Higuchi",

note = "Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 1st Conference on Light and Particle Beams in Materials Science 2013, LPBMS 2013 ; Conference date: 29-08-2013 Through 31-08-2013",

year = "2014",

doi = "10.1088/1742-6596/502/1/012001",

language = "English",

volume = "502",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Structural and electronic properties of anatase Ti1-xFe xO2-δ thin film prepared by RF magnetron sputtering

AU - Usui, K.

AU - Okumura, T.

AU - Sakai, E.

AU - Kumigashira, H.

AU - Higuchi, T.

PY - 2014

Y1 - 2014

N2 - Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub 300 ∼ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spectra exhibit that Ti 3d-band occupancy is increased as a result of the oxygen vacancies. The thin film prepared at 500°C has the Ti 3d -DOS at the Fermi level. These findings indicate that Ti 3d electrons created by the oxygen vacancies contribute to the electrical conductivity.

AB - Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub 300 ∼ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spectra exhibit that Ti 3d-band occupancy is increased as a result of the oxygen vacancies. The thin film prepared at 500°C has the Ti 3d -DOS at the Fermi level. These findings indicate that Ti 3d electrons created by the oxygen vacancies contribute to the electrical conductivity.

UR - http://www.scopus.com/inward/record.url?scp=84899646587&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899646587&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/502/1/012001

DO - 10.1088/1742-6596/502/1/012001

M3 - Conference article

AN - SCOPUS:84899646587

VL - 502

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012001

T2 - 1st Conference on Light and Particle Beams in Materials Science 2013, LPBMS 2013

Y2 - 29 August 2013 through 31 August 2013

ER -