Structural and Electronic Properties of a Mn Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition

Vijay Kumar Dixit, Koji Neishi, Noboru Akao, Junichi Koike

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

A diffusion barrier layer of a few nanometers in thickness is required for a Cu/SiO2 interconnect structure for advanced integrated circuits (ICs). This paper reports a new barrier material and process by chemical vapor deposition (CVD) of a Mn oxide layer using a bis(ethylcyclopentadienyl)manganese precursor. A good adhesion was obtained when the MnOx layer was deposited below 300 °C because of the small amount of carbon inclusion within the layer. The metal-oxide-semiconductor samples of Cu/MnO×/SiO2/p-Si showed a very low leakage current of less than 10−7 A/cm2 at 4 MV/cm and a negligible shift of the flat-band voltage after thermal annealing and bias temperature annealing. The obtained results indicated that the CVD-deposited MnO x is an excellent diffusion barrier layer for advanced ICs.

Original languageEnglish
Pages (from-to)295-302
Number of pages8
JournalIEEE Transactions on Device and Materials Reliability
Volume11
Issue number2
DOIs
Publication statusPublished - 2011 Jun

Keywords

  • Chemical vapor deposition (CVD)
  • diffusion barrier
  • interconnect
  • manganese oxide
  • metal-oxide-semiconductor (MOS) capacitors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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