Structural and electrical characteristics of Cu-Mn/SiOC/Si

S. M. Chung, J. Koike, Y. Otsuka, H. Sako, K. Ishibashi, N. Kawasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Structure and electrical characteristics were studied in Cu-Mn/SiOC/Si samples after annealing. A self-forming barrier layer was investigated for its chemical concentration and dielectric constants, depending on pre-annealing conditions of the SiOC substrate. Clear differences were observed by pre-annealing above 400 oC because of the moisture desorption.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2010
Number of pages1
Publication statusPublished - 2010
EventAdvanced Metallization Conference 2010 - Albany, NY, United States
Duration: 2010 Oct 52010 Oct 7

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2010
CountryUnited States
CityAlbany, NY
Period10/10/510/10/7

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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  • Cite this

    Chung, S. M., Koike, J., Otsuka, Y., Sako, H., Ishibashi, K., & Kawasaki, N. (2010). Structural and electrical characteristics of Cu-Mn/SiOC/Si. In Advanced Metallization Conference 2010 (Advanced Metallization Conference (AMC)).