TY - JOUR
T1 - Structural and charge transport characteristics of graphene layers obtained from CVD thin film and bulk graphite materials
AU - Tyurnina, Anastasia V.
AU - Tsukagoshi, Kazuhito
AU - Hiura, Hidefumi
AU - Obraztsov, Alexander N.
N1 - Funding Information:
This work was performed in frame of collaboration agreement between NIMS and MSU and was partially supported by the Grants of the Russian Foundation for Basic Research (10-02-01194-a), Ministry of Education and Science of the Russian Federation (Contract Nos. 16.740.11.0071 and 6.740.11.0763), by the Grant of the President of the Russian Federation (contract MK-16.120.11.3035), by the Grants-in-Aid for Scientific Research (No. 21241038 ) from the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) and by the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program) from the Japan Society for the Promotion of Science (JSPS) .
PY - 2013/2
Y1 - 2013/2
N2 - We report an experimental comparative study of graphene layers produced by micromechanical cleavage of bulk graphite materials of different origins and graphite films obtained by plasma enhanced chemical vapor deposition (PECVD). Structural characteristics of these materials were evaluated using Raman spectroscopy and electron microscopy. Field effect transistors (FETs) based on the PECVD graphene were produced using electron beam lithography. Conductivity, carrier mobility and other characteristics of the PECVD graphene obtained from Raman and FET tests were similar to the properties of graphene flakes obtained from bulk graphite materials. Taking into account the scalability of the CVD fabrication, these results confirm the possible industrial use of graphene films obtained by this method.
AB - We report an experimental comparative study of graphene layers produced by micromechanical cleavage of bulk graphite materials of different origins and graphite films obtained by plasma enhanced chemical vapor deposition (PECVD). Structural characteristics of these materials were evaluated using Raman spectroscopy and electron microscopy. Field effect transistors (FETs) based on the PECVD graphene were produced using electron beam lithography. Conductivity, carrier mobility and other characteristics of the PECVD graphene obtained from Raman and FET tests were similar to the properties of graphene flakes obtained from bulk graphite materials. Taking into account the scalability of the CVD fabrication, these results confirm the possible industrial use of graphene films obtained by this method.
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U2 - 10.1016/j.carbon.2012.09.003
DO - 10.1016/j.carbon.2012.09.003
M3 - Article
AN - SCOPUS:84869494300
VL - 52
SP - 49
EP - 55
JO - Carbon
JF - Carbon
SN - 0008-6223
ER -