Structural analysis of InxGa1-xN single quantum wells by coaxial-impact collision ion scattering spectroscopy

M. Sumiya, S. Nakamura, S. F. Chichibu, K. Mizuno, M. Furusawa, M. Yoshimoto

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The structures of InxGa1-xN single quantum wells (SQWs) on 3-μm-thick GaN layer for the ultraviolet, blue, and green light-emitting devices were investigated by coaxial-impact collision ion scattering spectroscopy (CAICISS). The possibility that CAICISS could analyze structural fluctuation of the ternary system like InxGa1-xN was demonstrated. It was found that In incorporated into InGaN SQWs occupied the substitutional site of Ga atom having Ga-face (+c) polarity.

Original languageEnglish
Pages (from-to)2512-2514
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number16
DOIs
Publication statusPublished - 2000 Oct 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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