Structural analyses of thin SiO2 films formed by thermal oxidation of atomically flat Si surface by using synchrotron radiation X-ray characterization

Kohki Nagata, Atsushi Ogura, Ichiro Hirosawa, Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Partially crystalline structures in thin SiO2 films formed by thermal oxidation of atomically flat Si surface were investigated by performing X-ray reflectometry and grazing incidence X-ray diffraction measurements. The densities of the SiO2 films were higher than those of amorphous SiO2 films, especially at the SiO2/Si interface. The structure of thermally grown SiO2 has been expected to be amorphous, but sharp diffraction peaks were observed in GIXRD measurements. The diffraction peaks tended to reflect a cristobalite-like structure with preferential orientations to the Si substrate. In addition, the lattice spacing of the cristobalite-like structure was estimated from the GIXRD measurement and found to be isotropically distorted.

Original languageEnglish
Pages (from-to)N96-N98
JournalECS Journal of Solid State Science and Technology
Volume4
Issue number8
DOIs
Publication statusPublished - 2015 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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