Strong atomic ordering in Gd-doped GaN

Manabu Ishimaru, Kotaro Higashi, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, Toyohiko J. Konno

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7 Citations (Scopus)

Abstract

Gd-doped GaN (Ga 1-xGd xN) thin films were grown on a GaN(001) template by radio frequency plasma-assisted molecular beam epitaxy and characterized by means of x-ray diffraction (XRD) and transmission electron microscopy (TEM). Three samples with a different Gd composition were prepared in this study: x = 0.02, 0.05, and 0.08. XRD and TEM results revealed that the low Gd concentration GaN possesses the wurtzite structure. On the other hand, it was found that an ordered phase with a quadruple-periodicity along the [001] direction in the wurtzite structure is formed throughout the film with x = 0.08. We proposed the atomistic model for the superlattice structure observed here.

Original languageEnglish
Article number101912
JournalApplied Physics Letters
Volume101
Issue number10
DOIs
Publication statusPublished - 2012 Sep 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ishimaru, M., Higashi, K., Hasegawa, S., Asahi, H., Sato, K., & Konno, T. J. (2012). Strong atomic ordering in Gd-doped GaN. Applied Physics Letters, 101(10), [101912]. https://doi.org/10.1063/1.4751245