Stress relaxation during isothermal annealing at elevated temperatures in electroplated Cu films

Soo Jung Hwang, Young Chang Joo, Junichi Koike

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Deformation mechanisms of electroplated Cu thin films on TaN/SiOz/Si were investigated by performing isothermal annealing above 200°C. Stress relaxation behavior during isothermal annealing was analyzed by curve fitting using exponential decay equations. During heating, fast relaxation and subsequent slow relaxation processes were observed. In contrast, during cooling, only slow relaxation process was observed. Among possible mechanisms for stress relaxation, diffusion creep was found to be the most plausible mechanism based on the obtained values of the activation energy. It was suggested that the slow relaxation process observed both in the heating and in the cooling processes was attributed to a grain-boundary diffusion creep. On the other hand, the fast relaxation process observed during heating was attributed to a surface-diffusion controlled mechanism. The surface diffusion mechanism was considered to be characteristic to Cu thin films that did not form stable surface oxide.

Original languageEnglish
Pages (from-to)205-210
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume795
DOIs
Publication statusPublished - 2003
EventThin Films - Stresses and Mechanical Properties X - Boston, MA., United States
Duration: 2003 Dec 12003 Dec 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Stress relaxation during isothermal annealing at elevated temperatures in electroplated Cu films'. Together they form a unique fingerprint.

  • Cite this