Stress polarity dependence of the activation energy in time-dependent dielectric breakdown of thin gate oxides

Koji Eriguchi, Masaaki Niwa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Stress polarity dependence of the activation energies in the two time dependent dielectric breakdown measurements, the constant-current injection (Qbd testing) and the constant-voltage stressing (fbd testing) are investigated for gate oxides with the thickness ranging from 10 to 4 nm. A remarkable polarity dependence of the activation energies appears in the tbd testing when the oxide thickness decreases. This phenomenon is found to be due to a characteristic temperature dependence of the gate current density during the whole fbd testing period for thinner oxides, which is considered as a result from the temperature dependence of the electron trapping process during the stressing.

Original languageEnglish
Pages (from-to)399-401
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number11
DOIs
Publication statusPublished - 1998 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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