Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface

Masahiro Kitajima, Tetsuya Narushima, Takayuki Kurashina, Akiko N. Itakura, Seiichi Takami, Aruba Yamada, Kazuo Teraishi, Akira Miyamoto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We report the real-time observation of the stress change during sub-nanometer oxide growth on the Si(100) surface. Oxidation initially induced a rapid buildup of tensile stress up to -1.9 × 108 N m -2 with an oxide thickness of 0.25 nm, followed by gradual compensation by a compressive stress. The compressive stress saturated at 5 × 107 N m-2 for an oxide thickness of 1.2 nm. The analysis, assisted by theoretical study, indicates that the observed initial tensile stress is caused by oxygen bridge-bonding between the Si dimers. Atomistic model calculations considering mutually orthogonal orientations of the Si(100) surface structure reproduce the stress inversion from the tensile to the compressive side.

Original languageEnglish
Article number355007
JournalJournal of Physics Condensed Matter
Volume25
Issue number35
DOIs
Publication statusPublished - 2013 Sep 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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