Stress induced leakage current generated by hot-hole injection

Akinobu Teramoto, Hyeonwoo Park, Takuya Inatsuka, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Stress induced leakage current (SILC) of the gate dielectrics is one of the most critical problems in a scaling down of flash memories, and it is important to clarify the mechanism of SILC generation. In this paper SILC caused by substrate hot-hole injection is investigated. The SILC caused by hot-hole injection depends only on the number of injected holes and is independent of the oxide field, hole energy, and injected hole density. SILC is defined by the current at largest leakage path, and the largest leakage path increases with the increase of the stress at the early stress region and SILC is defined by average value of the large number of leakage spots, then the SILC increases linearly with the stress.

Original languageEnglish
Pages (from-to)298-301
Number of pages4
JournalMicroelectronic Engineering
Volume109
DOIs
Publication statusPublished - 2013 May 3

Keywords

  • Hole
  • MOSFET
  • Stress induced leakage current
  • Tunnel oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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