STRESS-INDUCED DOUBLE-HUMP SUBSTRATE CURRENT IN MOSFET'S.

Tiao Yuan Huang, Clement Szeto, John Y. Chen, Alan G. Lewis, Russel A. Martin, John Shaw, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Asymmetries in substrate current characteristics due to hot-electron stressing have been observed in short-channel n-MOSFETs. Due to the localized nature of trapped charges or interface traps as a result of hot-electron stressing, transistors can show single-peak or double-hump substrate current characteristics under normal or reverse-mode measurements. Two-dimensional simulations indicate that a high lateral electric field is generated near the source when the negative charges are trapped there. This electric field is responsible for the observed double-hump substrate current and enhanced gate current injection under reverse-mode measurements for the stressed transistors.

Original languageEnglish
Pages (from-to)664-666
Number of pages3
JournalElectron device letters
VolumeEDL-7
Issue number12
Publication statusPublished - 1986 Dec 1

ASJC Scopus subject areas

  • Engineering(all)

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