Stress dependence of infrared-active mode of the β-Si3N4 ceramic appearing at 1020 cm-1 measured by micro-FT-IR spectroscopy

Katsuya Honda, Shino Yokoyama, Shun Ichiro Tanaka

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2 Citations (Scopus)


The stress dependence of the β-Si3N4 infrared-active band appearing at ∼1020 cm-1 was evaluated by using micro-FT-IR. A four-point-bending jig was built to apply stress to the sample. Two β-Si3N4 ceramics, prepared by pressureless sintering and hot-pressed sintering, were examined. The hot-pressed sample showed a linear relation to applied stress, whereas the pressureless sintered sample showed relatively scattered stress dependence due to the inferior signal-to-noise ratio of the spectra. The stress dependence parameter of the 1020 cm-1 band was evaluated as ∼2 cm-1/GPa.

Original languageEnglish
Pages (from-to)1274-1276
Number of pages3
JournalApplied spectroscopy
Issue number10
Publication statusPublished - 1998 Oct
Externally publishedYes


  • Micro-FT-IR
  • Stress dependence
  • β-SiN

ASJC Scopus subject areas

  • Instrumentation
  • Spectroscopy

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