Stress control of silicon membrane for optical scanner with deformable mirror

Takashi Sasaki; Kazuhiro Hane

doi:10.1541/ieejsmas.129.138

Stress control of silicon membrane for optical scanner with deformable mirror

Takashi Sasaki, Kazuhiro Hane

ENG - Finemechanics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The top silicon layer of single-crystal silicon-on-insulator wafer is used to fabricate flexible membrane for a deformable mirror. Boron implantation was carried out to control the stress of the silicon membrane. In the case of 415um diameter lμm thick mirror, the deflection of 320nm was generated due to the bending moment at the rim. After the implantation, it decreased to 120nm deflection by the increased of tensile stress. Moreover, etching the membrane from the thickness of lμm to 480nm. The deflection decreased to 20 nm and the flat region of mirror increased to 300μm in diameter.

Original language	English
Pages (from-to)	138-141
Number of pages	4
Journal	IEEJ Transactions on Sensors and Micromachines
Volume	129
Issue number	5
DOIs	https://doi.org/10.1541/ieejsmas.129.138
Publication status	Published - 2009 Jul 20

Keywords

Deformable mirror
Optical scanner
SOI wafer

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering

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AU - Hane, Kazuhiro

PY - 2009/7/20

Y1 - 2009/7/20

N2 - The top silicon layer of single-crystal silicon-on-insulator wafer is used to fabricate flexible membrane for a deformable mirror. Boron implantation was carried out to control the stress of the silicon membrane. In the case of 415um diameter lμm thick mirror, the deflection of 320nm was generated due to the bending moment at the rim. After the implantation, it decreased to 120nm deflection by the increased of tensile stress. Moreover, etching the membrane from the thickness of lμm to 480nm. The deflection decreased to 20 nm and the flat region of mirror increased to 300μm in diameter.

AB - The top silicon layer of single-crystal silicon-on-insulator wafer is used to fabricate flexible membrane for a deformable mirror. Boron implantation was carried out to control the stress of the silicon membrane. In the case of 415um diameter lμm thick mirror, the deflection of 320nm was generated due to the bending moment at the rim. After the implantation, it decreased to 120nm deflection by the increased of tensile stress. Moreover, etching the membrane from the thickness of lμm to 480nm. The deflection decreased to 20 nm and the flat region of mirror increased to 300μm in diameter.

KW - Deformable mirror

KW - Optical scanner

KW - SOI wafer

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JO - IEEJ Transactions on Sensors and Micromachines

JF - IEEJ Transactions on Sensors and Micromachines

SN - 1341-8939

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Stress control of silicon membrane for optical scanner with deformable mirror

Abstract

Keywords

ASJC Scopus subject areas

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