Stress Analysis of Transistor Structures Considering Internal Stress of Thin Films

Hideo Miura, Norio Ishitsuka, Naoto Saito, Hiroyuki Ohta, Chiemi Hashimoto, Shuji Ikeda

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Stress analysis of transistor structures is performed considering internal stress of thin fims. Internal stress of newly employed films such as amorphous-silicon and tungsten-silicide films are measured by detecting surface curvature change of the film-covered substrates, as a function of temperature. Internal stress of both films changes upon annealing due to phase transition, and reaches about 1 000 MPa. The predicted stress of transistor structures without considering the internal stress of the films differs markedly from the measured result obtained using microscopic Raman spectroscopy. On the other hand, the predicted stress considering the internal stress of the films agrees very well with the measured data. Stress design is performed on the actual transistor structure considering annealing temperature dependence on internal stress of the amorphous-silicon thin film to eliminate dislocation generation. It is confirmed that stress design is effective in improving device reliability.

Original languageEnglish
Pages (from-to)1807-1813
Number of pages7
JournalTransactions of the Japan Society of Mechanical Engineers Series A
Issue number576
Publication statusPublished - 1994
Externally publishedYes


  • Experimental Stress Analysis
  • Finite-Element Method
  • Internal Stress
  • Reliability
  • Residual Stress
  • Structural Analysis
  • Thermal Stress
  • Thin Films

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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