Abstract
A novel type of flexible organic field-effect transistor in which strain effects can be finely tuned continuously has been fabricated. In this novel device structure, electronic phases can be controlled both by "band-filling" and by "band-width" continuously. Finally, co-regulation of "band-filling" and "band-width" in the strongly-correlated organic material realize field-induced emergence of superconducting fractions at low temperature.
Original language | English |
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Pages (from-to) | 3490-3495 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2014 Jun 4 |
Externally published | Yes |
Keywords
- charge-transfer complex
- field-effect transistor
- mott transition
- strain-effect
- superconductivity
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering