Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

Takashi Hanada; Hirofumi Totsuka; Takafumi Yao

doi:10.1143/jjap.40.1878

Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

Takashi Hanada, Hirofumi Totsuka, Takafumi Yao

Materials Design Division

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Strain relaxation of self-assembled InAs quantum dots on GaAs.

Original language	English
Pages (from-to)	1878-1881
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	3 B
DOIs	https://doi.org/10.1143/jjap.40.1878
Publication status	Published - 2001

Keywords

GaAs
InAs
Lattice mismatch
Molecular-beam epitaxy
Quantum dot
RHEED
Strain relaxation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.1878

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@article{517fbdf47baf4ae7870a6945270626d9,

title = "Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction",

abstract = "Strain relaxation of self-assembled InAs quantum dots on GaAs.",

keywords = "GaAs, InAs, Lattice mismatch, Molecular-beam epitaxy, Quantum dot, RHEED, Strain relaxation",

author = "Takashi Hanada and Hirofumi Totsuka and Takafumi Yao",

year = "2001",

doi = "10.1143/jjap.40.1878",

language = "English",

volume = "40",

pages = "1878--1881",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 B",

}

TY - JOUR

T1 - Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

AU - Hanada, Takashi

AU - Totsuka, Hirofumi

AU - Yao, Takafumi

PY - 2001

Y1 - 2001

N2 - Strain relaxation of self-assembled InAs quantum dots on GaAs.

AB - Strain relaxation of self-assembled InAs quantum dots on GaAs.

KW - GaAs

KW - InAs

KW - Lattice mismatch

KW - Molecular-beam epitaxy

KW - Quantum dot

KW - RHEED

KW - Strain relaxation

UR - http://www.scopus.com/inward/record.url?scp=0035267634&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035267634&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.1878

DO - 10.1143/jjap.40.1878

M3 - Article

AN - SCOPUS:0035267634

VL - 40

SP - 1878

EP - 1881

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 B

ER -

Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

Abstract

Keywords

ASJC Scopus subject areas

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