Abstract
Strain relaxation of self-assembled InAs quantum dots on GaAs.
Original language | English |
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Pages (from-to) | 1878-1881 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 40 |
Issue number | 3 B |
Publication status | Published - 2001 Dec 1 |
Keywords
- GaAs
- InAs
- Lattice mismatch
- Molecular-beam epitaxy
- Quantum dot
- RHEED
- Strain relaxation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)