Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

Takashi Hanada, Hirofumi Totsuka, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Strain relaxation of self-assembled InAs quantum dots on GaAs.

Original languageEnglish
Pages (from-to)1878-1881
Number of pages4
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number3 B
Publication statusPublished - 2001 Dec 1

Keywords

  • GaAs
  • InAs
  • Lattice mismatch
  • Molecular-beam epitaxy
  • Quantum dot
  • RHEED
  • Strain relaxation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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