InGaN films were grown on off-axis m -GaN substrates by metalorganic vapor phase epitaxy. Rocking curves of X-ray diffraction around c-axis revealed that Inx Ga1-xN films incline to ±a1 direction when the film thickness and In composition x exceed a certain critical condition. The strain relaxation mechanism by introducing a2 and -a3 misfit dislocations at the interface is deduced from the ±a1 inclination. The rocking curves are reproduced fairly well by the scattering-intensity calculations according to the atomic displacements caused by an array of the misfit dislocations, whose intervals are given by an asymmetric distribution function.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2011 Feb 1|
- Misfit dislocation
- Strain relaxation
ASJC Scopus subject areas
- Condensed Matter Physics