TY - JOUR
T1 - Strain-induced switching of heat current direction generated by magneto-thermoelectric effects
AU - Ota, Shinya
AU - Uchida, Ken ichi
AU - Iguchi, Ryo
AU - Thach, Pham Van
AU - Awano, Hiroyuki
AU - Chiba, Daichi
N1 - Funding Information:
The authors thank Tomohiro Koyama, Yuki Hibino, Takahiro Namazu, Taishi Takenobu, and Shimpei Ono for their technical help. S.O. acknowledges the support of the JSPS KAKENHI (Grant No. JP17J03125). K.U. was supported by JST-CREST “Creation of Innovative Core Technologies for Nano-enabled Thermal Management” (Grant No. JPMJCR17I1) and the NEC Corporation. D.C. acknowledges the support of the JSPS KAKENHI (Grant No. JP25220604 and JP19H00860) and Spintronics Research Network of Japan.
PY - 2019/12/1
Y1 - 2019/12/1
N2 - Since the charge current plays a major role in information processing and Joule heating is inevitable in electronic devices, thermal management, i.e., designing heat flows, is required. Here, we report that strain application can change a direction of a heat current generated by magneto-thermoelectric effects. For demonstration, we used metallic magnets in a thin-film form, wherein the anomalous Ettingshausen effect mainly determines the direction of the heat flow. Strain application can alter the magnetization direction owing to the magnetoelastic effect. As a result, the heat current, which is in the direction of the cross product of the charge current and the magnetization vector, can be switched or rotated simply by applying a tensile strain to the metallic magnets. We demonstrate 180° switching and 90° rotation of the heat currents in an in-plane magnetized Ni sample on a rigid sapphire substrate and a perpendicularly magnetized TbFeCo film on a flexible substrate, respectively. An active thermography technique was used to capture the strain-induced change in the heat current direction. The method presented here provides a novel method for controlling thermal energy in electronic devices.
AB - Since the charge current plays a major role in information processing and Joule heating is inevitable in electronic devices, thermal management, i.e., designing heat flows, is required. Here, we report that strain application can change a direction of a heat current generated by magneto-thermoelectric effects. For demonstration, we used metallic magnets in a thin-film form, wherein the anomalous Ettingshausen effect mainly determines the direction of the heat flow. Strain application can alter the magnetization direction owing to the magnetoelastic effect. As a result, the heat current, which is in the direction of the cross product of the charge current and the magnetization vector, can be switched or rotated simply by applying a tensile strain to the metallic magnets. We demonstrate 180° switching and 90° rotation of the heat currents in an in-plane magnetized Ni sample on a rigid sapphire substrate and a perpendicularly magnetized TbFeCo film on a flexible substrate, respectively. An active thermography technique was used to capture the strain-induced change in the heat current direction. The method presented here provides a novel method for controlling thermal energy in electronic devices.
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U2 - 10.1038/s41598-019-49567-2
DO - 10.1038/s41598-019-49567-2
M3 - Article
C2 - 31519954
AN - SCOPUS:85072224677
VL - 9
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 13197
ER -