Surface segregation and strain relaxation processes in layer-by-layer growing InxGa1-xAs films on the GaAs(001) and GaAs(111)A substrates have been studied. While the lattice strain is almost relaxed by introducing misfit dislocations on the (111)A substrate, the in-plane lattice constant of the growing film on the (001) substrate hardly changes throughout the growth. We found that a significant amount of In atoms is segregated to the growing surface on the (001) substrate, which is induced by the lattice strain at the coherent (001) interface.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)