Strain-induced level in copper-doped silicon

Naotake Toyama, Taiichi Otsuji

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

It has been found that in copper-doped silicon, both the concentration and the degeneracy ratio of the deep acceptor level lying at 0.16 eV from the conduction band edge vary having a maximum and minimum value with increase in copper-doping level. Since the variations of these deep-level parameters correspond very well to that of the silicon crystal lattice strain due to numerous copper precipitates, we can infer that the acceptor level is a strain-induced level which is introduced by copper diffusion.

Original languageEnglish
Pages (from-to)4623-4625
Number of pages3
JournalJournal of Applied Physics
Volume57
Issue number10
DOIs
Publication statusPublished - 1985 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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