Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation

Hiroshi Moriya, Tomio Iwasaki, Hideo Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We propose a new leakage mechanism that depends on the mechanical strain in high-k gate oxides, namely "high strain-induced leakage current". To explain this current, we analyzed the strain dependence of the leakage current of gate oxides by performing a first-principles calculation. The analysis showed that the leakage current drastically increases with tensile strain.

Original languageEnglish
Title of host publication2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Pages331-334
Number of pages4
Publication statusPublished - 2005 Dec 1
Event2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan
Duration: 2005 Sep 12005 Sep 3

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2005

Other

Other2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Country/TerritoryJapan
CityTokyo
Period05/9/105/9/3

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation'. Together they form a unique fingerprint.

Cite this