Strain enhanced FUSI/HfSiON technology with optimized CMOS process window

A. Veloso, P. Verheyen, R. Vos, S. Brus, S. Ito, R. Mitsuhashi, V. Paraschiv, X. Shi, B. Onsia, S. Arnauts, R. Loo, A. Lauwers, T. Conard, J. F. De Marneffe, D. Goossens, D. Baute, S. Locorotondo, T. Chiarella, C. Kerner, C. VranckenS. Mertens, B. J. O'Sullivan, H. Y. Yu, S. Z. Chang, Masaaki Niwa, J. A. Kittl, P. P. Absil, M. Jurczak, T. Hoffmann, S. Biesemans

Research output: Contribution to journalConference article

2 Citations (Scopus)

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Engineering & Materials Science