Strain effect on electronic states of Si near a Si/NiSi2 interface measured by electron nanoprobe techniques

Yutaka Wakayama, Shun Ichiro Tanaka

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Lattice strains near the Si/NiSi2 interface and their effects on electron energy-levels of Si were investigated via experimental and theoretical approaches. For highly spatially resolved analysis, electron nanoprobe techniques were employed: convergent beam electron diffraction (CBED) for lattice strain and electron energy-loss spectroscopy (EELS) for the electron energy-levels. Additionally, a theoretical analysis based on the density-functional theory (DFT) was performed to explain the experimental results. The actual distribution of the lattice strains was complicated; both tensile and compressive strains were found to coexist near the interface. Shifts in the Si L23-edge of the EEL spectra were found to be induced by the lattice strain. Finally, we described the "distribution of the electron energy-levels" as the strain distribution around the interface in a submicron region.

Original languageEnglish
Pages (from-to)408-413
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number2
DOIs
Publication statusPublished - 1998 Feb

Keywords

  • CBED
  • DFT
  • EELS
  • Electron energy-level
  • Lattice strain

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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