Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution

Noritaka Usami, Tatsuya Takahashi, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Yoshihiro Murakami, Kazuo Nakajima

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The growth and characterization of Si/multicrystalline-SiGe (mc-SiGe) heterostructure were reported. The strain distribution of Si thin film grown on mc-SiGe was investigated by Raman spectroscopy. It was found that on decreasing the average Ge composition of underlying SiGe, the spatial variation of the strain as well as strain relaxation was suppressed.

Original languageEnglish
Pages (from-to)7098-7101
Number of pages4
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
Publication statusPublished - 2002 Dec 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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