The growth and characterization of Si/multicrystalline-SiGe (mc-SiGe) heterostructure were reported. The strain distribution of Si thin film grown on mc-SiGe was investigated by Raman spectroscopy. It was found that on decreasing the average Ge composition of underlying SiGe, the spatial variation of the strain as well as strain relaxation was suppressed.
ASJC Scopus subject areas
- Physics and Astronomy(all)