Lattice strain distribution was measured in Si (111) substrates near NiSi2 islands. Quantitative measurements with high spacial resolution were performed using convergent beam electron diffraction (CBED). Distorted and lower-symmetry CBED patterns were observed up to 2.0 μm from NiSi2 islands. We show that these CBED patterns can be accounted for by a combination of stress components with different orientations. Stresses were found to be tensile perpendicular to NiSi2 island edges and compressive parallel to them. In addition, another stress component which had a characteristic orientation was detectable within 0.5 μm of NiSi2 island edges.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||12 B|
|Publication status||Published - 1996 Dec 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)