Abstract
Lattice strain distribution was measured in Si (111) substrates near NiSi2 islands. Quantitative measurements with high spacial resolution were performed using convergent beam electron diffraction (CBED). Distorted and lower-symmetry CBED patterns were observed up to 2.0 μm from NiSi2 islands. We show that these CBED patterns can be accounted for by a combination of stress components with different orientations. Stresses were found to be tensile perpendicular to NiSi2 island edges and compressive parallel to them. In addition, another stress component which had a characteristic orientation was detectable within 0.5 μm of NiSi2 island edges.
| Original language | English |
|---|---|
| Pages (from-to) | L1662-L1665 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 35 |
| Issue number | 12 B |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Wakayama, Y., Takahashi, Y., & Tanaka, S. I. (1996). Strain distribution near Si/NiSi2 interface measured by convergent beam electron diffraction. Japanese Journal of Applied Physics, Part 2: Letters, 35(12 B), L1662-L1665.