Strain distribution near Si/NiSi2 interface measured by convergent beam electron diffraction

Yutaka Wakayama, Yumiko Takahashi, Shun ichiro Tanaka

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5 Citations (Scopus)


Lattice strain distribution was measured in Si (111) substrates near NiSi2 islands. Quantitative measurements with high spacial resolution were performed using convergent beam electron diffraction (CBED). Distorted and lower-symmetry CBED patterns were observed up to 2.0 μm from NiSi2 islands. We show that these CBED patterns can be accounted for by a combination of stress components with different orientations. Stresses were found to be tensile perpendicular to NiSi2 island edges and compressive parallel to them. In addition, another stress component which had a characteristic orientation was detectable within 0.5 μm of NiSi2 island edges.

Original languageEnglish
Pages (from-to)L1662-L1665
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number12 B
Publication statusPublished - 1996 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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