Strain dependence of dielectric properties and reliability of high-k thin films

Ken Suzuki, K. Imasaki, Y. Ito, Hideo Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of strain on both electronic and structural characteristics of HfO2 used for sub-50-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The band structure of HfO 2 is strongly affected by strain in the film. Based on the change rate of band gap obtained from our simulations, the strain sensitivity of the relative permittivity of HfO2 film is predicted to about 2.4%/1%-strain. The predicted strain sensitivity was validated quantitatively by measuring the change of the capacitance of MOS capacitors using a HfO 2 gate dielectric film. It is very important, therefore, to minimize the mechanical strain in the dielectric film to assure the reliability of MOS transistor.

Original languageEnglish
Title of host publicationSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
Publication statusPublished - 2009 Dec 1
EventSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
Duration: 2009 Sep 92009 Sep 11

Other

OtherSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
CountryUnited States
CitySan Diego, CA
Period09/9/909/9/11

Keywords

  • Band gap
  • HfO2 film
  • Quantum chemical molecular dynamics
  • Reliability
  • Strain

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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