Strain control of stripe patterned Si/Si1-xGe x/Si(100) heterostructures

Jangwoong Uhm; Masao Sakuraba; Junichi Murota

doi:10.1149/1.2355839

Strain control of stripe patterned Si/Si_1-xGe _x/Si(100) heterostructures

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

In Si/Si_1-xGe_x/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si_1-xGe_x layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si_1-xGe_x/Si(100) heterostructure indicates strain relaxation in Si_1-xGe_x layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si_0.6Ge_0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si _1-xGe_x/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	421-427
Number of pages	7
Journal	ECS Transactions
Volume	3
Issue number	7
DOIs	https://doi.org/10.1149/1.2355839
Publication status	Published - 2006 Dec 1
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

ASJC Scopus subject areas

Engineering(all)

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title = "Strain control of stripe patterned Si/Si1-xGe x/Si(100) heterostructures",

abstract = "In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.",

author = "Jangwoong Uhm and Masao Sakuraba and Junichi Murota",

year = "2006",

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doi = "10.1149/1.2355839",

language = "English",

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journal = "ECS Transactions",

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note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

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T1 - Strain control of stripe patterned Si/Si1-xGe x/Si(100) heterostructures

AU - Uhm, Jangwoong

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.

AB - In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.

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