Strain control of stripe patterned Si/Si1-xGe x/Si(100) heterostructures

Jangwoong Uhm; Masao Sakuraba; Junichi Murota

doi:10.1149/1.2355839

Strain control of stripe patterned Si/Si_1-xGe _x/Si(100) heterostructures

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In Si/Si_1-xGe_x/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si_1-xGe_x layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si_1-xGe_x/Si(100) heterostructure indicates strain relaxation in Si_1-xGe_x layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si_0.6Ge_0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si _1-xGe_x/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.

Original language	English
Title of host publication	SiGe and Ge
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	421-427
Number of pages	7
Edition	7
ISBN (Electronic)	1566775078
DOIs	https://doi.org/10.1149/1.2355839
Publication status	Published - 2006
Externally published	Yes
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

Publication series

Name	ECS Transactions
Number	7
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06/10/29 → 06/11/3

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2355839

Cite this

Uhm, J, Sakuraba, M & Murota, J 2006, Strain control of stripe patterned Si/Si_1-xGe _x/Si(100) heterostructures. in SiGe and Ge: Materials, Processing, and Devices. 7 edn, ECS Transactions, no. 7, vol. 3, Electrochemical Society Inc., pp. 421-427, SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2355839

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title = "Strain control of stripe patterned Si/Si1-xGe x/Si(100) heterostructures",

abstract = "In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.",

author = "Jangwoong Uhm and Masao Sakuraba and Junichi Murota",

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N2 - In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.

AB - In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.

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