@inproceedings{3b3493053c0d453a9eb8b5d26a139275,
title = "Strain control of stripe patterned Si/Si1-xGe x/Si(100) heterostructures",
abstract = "In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.",
author = "Jangwoong Uhm and Masao Sakuraba and Junichi Murota",
year = "2006",
doi = "10.1149/1.2355839",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "421--427",
booktitle = "SiGe and Ge",
edition = "7",
note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}