Abstract
In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.
Original language | English |
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Pages (from-to) | 421-427 |
Number of pages | 7 |
Journal | ECS Transactions |
Volume | 3 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2006 Dec 1 |
Event | SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3 |
ASJC Scopus subject areas
- Engineering(all)