Strain control of stripe patterned Si/Si1-xGe x/Si(100) heterostructures

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

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1 Citation (Scopus)


In Si/Si1-xGex/Si(100) heterostructure patterned into stripe shape with 〈110〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe patterned Si/Si1-xGex/Si(100) heterostructure indicates strain relaxation in Si1-xGex layer and introduction of tensile strain into capping Si layer by submicron stripe patterning. It is found that the effect of heat-treatment (750°C, 3 h) on the strain relaxation in Si0.6Ge0.4 layer of stripe has a negligibly small. The metal-oxide-semiconductor capacitor and photoluminescence measurements for strain controlled stripe patterned Si/Si 1-xGex/Si(100) heterostructure shows the change of energy band structure. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)421-427
Number of pages7
JournalECS Transactions
Issue number7
Publication statusPublished - 2006 Dec 1
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

ASJC Scopus subject areas

  • Engineering(all)

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