By stripe-shape patterning of the Si/strained Si1-xGe x/Si(100) heterostructures, the strained Si1-xGe x layer is relaxed and the relaxation induces tensile strain in the capping Si layer. The degree of the relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. It is found that the relaxation in Si1-xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge. The strain degree in the capping Si layer becomes smaller towards depth direction for the thicker capping Si layer than 5-10 nm. The resistivity measurements of the in-situ doped capping Si and Si1-xGex layers in the stripe-shape patterned heterostructure show that the tensile strain induces mobility enhancement for both electron and hole, and the relaxation of strain induces mobility reduction for hole in Si1-xGex layer.