@inproceedings{3d86b30c8b3041dfa60c91c605289bca,
title = "Strain control of Si and Si1-xGex layers in the Si/Si1-xGex/Si heterostructures by stripe-shape patterning for future Si-based devices",
abstract = "By stripe-shape patterning of the Si/strained Si1-xGe x/Si(100) heterostructures, the strained Si1-xGe x layer is relaxed and the relaxation induces tensile strain in the capping Si layer. The degree of the relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. It is found that the relaxation in Si1-xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge. The strain degree in the capping Si layer becomes smaller towards depth direction for the thicker capping Si layer than 5-10 nm. The resistivity measurements of the in-situ doped capping Si and Si1-xGex layers in the stripe-shape patterned heterostructure show that the tensile strain induces mobility enhancement for both electron and hole, and the relaxation of strain induces mobility reduction for hole in Si1-xGex layer.",
author = "Junichi Murota and Jangwoong Uhm and Masao Sakuraba",
year = "2007",
doi = "10.1149/1.2778368",
language = "English",
isbn = "9781566775724",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "91--99",
booktitle = "ECS Transactions - 5th International Symposium on ULSI Process Integration",
edition = "6",
note = "5th International Symposium on ULSI Process Integration - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}