Strain control of Si and Si1-xGex layers in the Si/Si1-xGex/Si heterostructures by stripe-shape patterning for future Si-based devices

Junichi Murota; Jangwoong Uhm; Masao Sakuraba

doi:10.1149/1.2778368

Strain control of Si and Si_1-xGe_x layers in the Si/Si_1-xGe_x/Si heterostructures by stripe-shape patterning for future Si-based devices

Junichi Murota, Jangwoong Uhm, Masao Sakuraba

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

By stripe-shape patterning of the Si/strained Si_1-xGe _x/Si(100) heterostructures, the strained Si_1-xGe _x layer is relaxed and the relaxation induces tensile strain in the capping Si layer. The degree of the relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. It is found that the relaxation in Si_1-xGe_x layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge. The strain degree in the capping Si layer becomes smaller towards depth direction for the thicker capping Si layer than 5-10 nm. The resistivity measurements of the in-situ doped capping Si and Si_1-xGe_x layers in the stripe-shape patterned heterostructure show that the tensile strain induces mobility enhancement for both electron and hole, and the relaxation of strain induces mobility reduction for hole in Si_1-xGe_x layer.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on ULSI Process Integration
Pages	91-99
Number of pages	9
Edition	6
DOIs	https://doi.org/10.1149/1.2778368
Publication status	Published - 2007 Dec 1
Event	5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 7 → 2007 Oct 12

Publication series

Name	ECS Transactions
Number	6
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on ULSI Process Integration - 212th ECS Meeting
Country	United States
City	Washington, DC
Period	07/10/7 → 07/10/12

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2778368

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Murota, J., Uhm, J., & Sakuraba, M. (2007). Strain control of Si and Si_1-xGe_x layers in the Si/Si_1-xGe_x/Si heterostructures by stripe-shape patterning for future Si-based devices. In ECS Transactions - 5th International Symposium on ULSI Process Integration (6 ed., pp. 91-99). (ECS Transactions; Vol. 11, No. 6). https://doi.org/10.1149/1.2778368

Strain control of Si and Si_1-xGe_x layers in the Si/Si_1-xGe_x/Si heterostructures by stripe-shape patterning for future Si-based devices. / Murota, Junichi; Uhm, Jangwoong; Sakuraba, Masao.

ECS Transactions - 5th International Symposium on ULSI Process Integration. 6. ed. 2007. p. 91-99 (ECS Transactions; Vol. 11, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Murota, J, Uhm, J & Sakuraba, M 2007, Strain control of Si and Si_1-xGe_x layers in the Si/Si_1-xGe_x/Si heterostructures by stripe-shape patterning for future Si-based devices. in ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 edn, ECS Transactions, no. 6, vol. 11, pp. 91-99, 5th International Symposium on ULSI Process Integration - 212th ECS Meeting, Washington, DC, United States, 07/10/7. https://doi.org/10.1149/1.2778368

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abstract = "By stripe-shape patterning of the Si/strained Si1-xGe x/Si(100) heterostructures, the strained Si1-xGe x layer is relaxed and the relaxation induces tensile strain in the capping Si layer. The degree of the relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. It is found that the relaxation in Si1-xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge. The strain degree in the capping Si layer becomes smaller towards depth direction for the thicker capping Si layer than 5-10 nm. The resistivity measurements of the in-situ doped capping Si and Si1-xGex layers in the stripe-shape patterned heterostructure show that the tensile strain induces mobility enhancement for both electron and hole, and the relaxation of strain induces mobility reduction for hole in Si1-xGex layer.",

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AB - By stripe-shape patterning of the Si/strained Si1-xGe x/Si(100) heterostructures, the strained Si1-xGe x layer is relaxed and the relaxation induces tensile strain in the capping Si layer. The degree of the relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. It is found that the relaxation in Si1-xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge. The strain degree in the capping Si layer becomes smaller towards depth direction for the thicker capping Si layer than 5-10 nm. The resistivity measurements of the in-situ doped capping Si and Si1-xGex layers in the stripe-shape patterned heterostructure show that the tensile strain induces mobility enhancement for both electron and hole, and the relaxation of strain induces mobility reduction for hole in Si1-xGex layer.

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