Strain control of Si and Si1-xGex layers in the Si/Si1-xGex/Si heterostructures by stripe-shape patterning for future Si-based devices

Junichi Murota, Jangwoong Uhm, Masao Sakuraba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By stripe-shape patterning of the Si/strained Si1-xGe x/Si(100) heterostructures, the strained Si1-xGe x layer is relaxed and the relaxation induces tensile strain in the capping Si layer. The degree of the relaxation becomes larger for a narrower stripe, higher Ge fraction, and thinner capping Si layer. It is found that the relaxation in Si1-xGex layer proceeds in the region from the stripe edge to the inner position of 0.4 μm away from the edge. The strain degree in the capping Si layer becomes smaller towards depth direction for the thicker capping Si layer than 5-10 nm. The resistivity measurements of the in-situ doped capping Si and Si1-xGex layers in the stripe-shape patterned heterostructure show that the tensile strain induces mobility enhancement for both electron and hole, and the relaxation of strain induces mobility reduction for hole in Si1-xGex layer.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages91-99
Number of pages9
Edition6
DOIs
Publication statusPublished - 2007 Dec 1
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number6
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/707/10/12

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Murota, J., Uhm, J., & Sakuraba, M. (2007). Strain control of Si and Si1-xGex layers in the Si/Si1-xGex/Si heterostructures by stripe-shape patterning for future Si-based devices. In ECS Transactions - 5th International Symposium on ULSI Process Integration (6 ed., pp. 91-99). (ECS Transactions; Vol. 11, No. 6). https://doi.org/10.1149/1.2778368