Strain control of Si and Si1-x-yGexC ylayers in Si/ Si1-x-yGexCy/Si heterostructures by low-pressure chemical vapor deposition

Junichi Murota, Tomohira Kikuchi, Jiro Hasegawa, Masao Sakuraba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

The epitaxial growth of strained Si1-x-yGexC ylayer with high Ge fraction and high C fraction on unstrained and tensile-strained Si(100) is performed at 500 or 550°C by ultraclean low-pressure chemical vapor deposition. Evaluating the Si1-x-yGe xCylayer by high resolution X-ray photoelectron spectroscopy (XPS), X-ray diffraction and Raman scattering spectroscopy, it is proposed that XPS C1s peak at around 283.3 eV is attributed to substititional C in Si1-x-yGexCy layer. The relationship between Raman shift and vertical lattice constant for the strained layer is explained quantitatively and it is confirmed that growth characteristics as well as electrical activity of impurity in the strained layer are influenced by the substrate surface strain before the layer growth. By stripeshape patterning unstrained Si cap layer/strained Si1-x-yGexCy layer/Si(100) heterostructure, the compressive- and tensile-strained Si layer formation is performed.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages245-254
Number of pages10
Edition9
DOIs
Publication statusPublished - 2012 Dec 1
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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