Strain control of Si and Si 1-y C y layers in Si/Si 1-y C y /Si(100) heterostructures

Tomohira Kikuchi, Masao Sakuraba, Ioan Costina, Bernd Tillack, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Strain engineering has become indispensable for electron and hole mobility improvement of ULSIs as scaling down of device dimension. In order to realize the high performance strained Si layer, it is very important to create a defect-free relaxed Si 1-x-y Ge x C y layer. In the previous work, it was found that, by stripe-shape patterning unstrained Si cap layer/compressive-strained Si 1-x Ge x layer/Si(100) heterostructure, the strain of the cap Si layer becomes tensile and resistivity of both n- and p-type cap Si layers becomes smaller at the narrower stripe width below 250 nm, although change of the resistivity for the unstrained Si is negligibly small. On the other hand, it was found that electrical inactive P and B atoms are generated by tensile-strain in heavy P and B doped region. In the present work, in-situ heavy C doping in Si growth and compressive-strained Si layer formation by stripe-shape patterning unstrained Si cap layer/tensile-strained Si 1-y C y layer/Si(100) are investigated. We have demonstrated that lattice constant and Raman shifts of Si-Si and Si-C modes of Si 1-y C y are normalized by C fraction obtained from XPS C1s peak at 283.3 eV that is substitutional C fraction. By stripe-shape patterning of the Si(10 nm)/Si0.98C0.02(20-60 nm)/Si(100) heterostructure, compressive-strained Si cap layer is realized.

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages122-123
Number of pages2
DOIs
Publication statusPublished - 2012 Jul 30
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 2012 Jun 42012 Jun 6

Publication series

Name2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period12/6/412/6/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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