TY - GEN
T1 -
Strain control of Si and Si
1-y
C
y
layers in Si/Si
1-y
C
y
/Si(100) heterostructures
AU - Kikuchi, Tomohira
AU - Sakuraba, Masao
AU - Costina, Ioan
AU - Tillack, Bernd
AU - Murota, Junichi
PY - 2012/7/30
Y1 - 2012/7/30
N2 -
Strain engineering has become indispensable for electron and hole mobility improvement of ULSIs as scaling down of device dimension. In order to realize the high performance strained Si layer, it is very important to create a defect-free relaxed Si
1-x-y
Ge
x
C
y
layer. In the previous work, it was found that, by stripe-shape patterning unstrained Si cap layer/compressive-strained Si
1-x
Ge
x
layer/Si(100) heterostructure, the strain of the cap Si layer becomes tensile and resistivity of both n- and p-type cap Si layers becomes smaller at the narrower stripe width below 250 nm, although change of the resistivity for the unstrained Si is negligibly small. On the other hand, it was found that electrical inactive P and B atoms are generated by tensile-strain in heavy P and B doped region. In the present work, in-situ heavy C doping in Si growth and compressive-strained Si layer formation by stripe-shape patterning unstrained Si cap layer/tensile-strained Si
1-y
C
y
layer/Si(100) are investigated. We have demonstrated that lattice constant and Raman shifts of Si-Si and Si-C modes of Si
1-y
C
y
are normalized by C fraction obtained from XPS C1s peak at 283.3 eV that is substitutional C fraction. By stripe-shape patterning of the Si(10 nm)/Si0.98C0.02(20-60 nm)/Si(100) heterostructure, compressive-strained Si cap layer is realized.
AB -
Strain engineering has become indispensable for electron and hole mobility improvement of ULSIs as scaling down of device dimension. In order to realize the high performance strained Si layer, it is very important to create a defect-free relaxed Si
1-x-y
Ge
x
C
y
layer. In the previous work, it was found that, by stripe-shape patterning unstrained Si cap layer/compressive-strained Si
1-x
Ge
x
layer/Si(100) heterostructure, the strain of the cap Si layer becomes tensile and resistivity of both n- and p-type cap Si layers becomes smaller at the narrower stripe width below 250 nm, although change of the resistivity for the unstrained Si is negligibly small. On the other hand, it was found that electrical inactive P and B atoms are generated by tensile-strain in heavy P and B doped region. In the present work, in-situ heavy C doping in Si growth and compressive-strained Si layer formation by stripe-shape patterning unstrained Si cap layer/tensile-strained Si
1-y
C
y
layer/Si(100) are investigated. We have demonstrated that lattice constant and Raman shifts of Si-Si and Si-C modes of Si
1-y
C
y
are normalized by C fraction obtained from XPS C1s peak at 283.3 eV that is substitutional C fraction. By stripe-shape patterning of the Si(10 nm)/Si0.98C0.02(20-60 nm)/Si(100) heterostructure, compressive-strained Si cap layer is realized.
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U2 - 10.1109/ISTDM.2012.6222488
DO - 10.1109/ISTDM.2012.6222488
M3 - Conference contribution
AN - SCOPUS:84864240284
SN - 9781457718625
T3 - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
SP - 122
EP - 123
BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
T2 - 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Y2 - 4 June 2012 through 6 June 2012
ER -