Strain control and electrical properties of stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructures

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

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11 Citations (Scopus)

Abstract

In a Si/Si1-xGex/Si(1 0 0) heterostructure patterned into a shape striped in the 〈1 1 0〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructure indicates strain relaxation in the Si1-xGex layer and introduction of tensile strain into the capping Si layer by submicron stripe patterning. It is found that the degree of strain relaxation in the Si 1-xGex layer is strongly dependent on the stripe width, the capping Si layer thickness and the Si1- xGex layer thickness. Four-terminal resistivity measurement of the strain-controlled Si/Si1-xGe x/Si(1 0 0) heterostructure shows an increase of the electron and hole conductivity for the tensile strained capping Si layer and a decrease of the hole conductivity for the partially relaxed Si1- xGex layer.

Original languageEnglish
Article numberS08
Pages (from-to)S33-S37
JournalSemiconductor Science and Technology
Volume22
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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