Strain control and electrical properties of stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructures

Jangwoong Uhm; Masao Sakuraba; Junichi Murota

doi:10.1088/0268-1242/22/1/S08

Strain control and electrical properties of stripe-patterned Si/Si _1-xGe_x/Si(1 0 0) heterostructures

Jangwoong Uhm, Masao Sakuraba, Junichi Murota

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In a Si/Si_1-xGe_x/Si(1 0 0) heterostructure patterned into a shape striped in the 〈1 1 0〉 direction, strain control of capping Si and Si_1-xGe_x layers is investigated. The Raman scattering analysis of the stripe-patterned Si/Si _1-xGe_x/Si(1 0 0) heterostructure indicates strain relaxation in the Si_1-xGe_x layer and introduction of tensile strain into the capping Si layer by submicron stripe patterning. It is found that the degree of strain relaxation in the Si _1-xGe_x layer is strongly dependent on the stripe width, the capping Si layer thickness and the Si_1- _xGe_x layer thickness. Four-terminal resistivity measurement of the strain-controlled Si/Si_1-xGe _x/Si(1 0 0) heterostructure shows an increase of the electron and hole conductivity for the tensile strained capping Si layer and a decrease of the hole conductivity for the partially relaxed Si_1- _xGe_x layer.

Original language	English
Article number	S08
Pages (from-to)	S33-S37
Journal	Semiconductor Science and Technology
Volume	22
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/22/1/S08
Publication status	Published - 2007 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/22/1/S08

Cite this

@article{4cdd13987cc947e5af0e9f2619139bc7,

title = "Strain control and electrical properties of stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructures",

abstract = "In a Si/Si1-xGex/Si(1 0 0) heterostructure patterned into a shape striped in the 〈1 1 0〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructure indicates strain relaxation in the Si1-xGex layer and introduction of tensile strain into the capping Si layer by submicron stripe patterning. It is found that the degree of strain relaxation in the Si 1-xGex layer is strongly dependent on the stripe width, the capping Si layer thickness and the Si1- xGex layer thickness. Four-terminal resistivity measurement of the strain-controlled Si/Si1-xGe x/Si(1 0 0) heterostructure shows an increase of the electron and hole conductivity for the tensile strained capping Si layer and a decrease of the hole conductivity for the partially relaxed Si1- xGex layer.",

author = "Jangwoong Uhm and Masao Sakuraba and Junichi Murota",

year = "2007",

month = jan,

day = "1",

doi = "10.1088/0268-1242/22/1/S08",

language = "English",

volume = "22",

pages = "S33--S37",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Strain control and electrical properties of stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructures

AU - Uhm, Jangwoong

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2007/1/1

Y1 - 2007/1/1

N2 - In a Si/Si1-xGex/Si(1 0 0) heterostructure patterned into a shape striped in the 〈1 1 0〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructure indicates strain relaxation in the Si1-xGex layer and introduction of tensile strain into the capping Si layer by submicron stripe patterning. It is found that the degree of strain relaxation in the Si 1-xGex layer is strongly dependent on the stripe width, the capping Si layer thickness and the Si1- xGex layer thickness. Four-terminal resistivity measurement of the strain-controlled Si/Si1-xGe x/Si(1 0 0) heterostructure shows an increase of the electron and hole conductivity for the tensile strained capping Si layer and a decrease of the hole conductivity for the partially relaxed Si1- xGex layer.

AB - In a Si/Si1-xGex/Si(1 0 0) heterostructure patterned into a shape striped in the 〈1 1 0〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructure indicates strain relaxation in the Si1-xGex layer and introduction of tensile strain into the capping Si layer by submicron stripe patterning. It is found that the degree of strain relaxation in the Si 1-xGex layer is strongly dependent on the stripe width, the capping Si layer thickness and the Si1- xGex layer thickness. Four-terminal resistivity measurement of the strain-controlled Si/Si1-xGe x/Si(1 0 0) heterostructure shows an increase of the electron and hole conductivity for the tensile strained capping Si layer and a decrease of the hole conductivity for the partially relaxed Si1- xGex layer.

UR - http://www.scopus.com/inward/record.url?scp=34247213336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247213336&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/22/1/S08

DO - 10.1088/0268-1242/22/1/S08

M3 - Article

AN - SCOPUS:34247213336

VL - 22

SP - S33-S37

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 1

M1 - S08

ER -

Strain control and electrical properties of stripe-patterned Si/Si _1-xGe_x/Si(1 0 0) heterostructures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this