In a Si/Si1-xGex/Si(1 0 0) heterostructure patterned into a shape striped in the 〈1 1 0〉 direction, strain control of capping Si and Si1-xGex layers is investigated. The Raman scattering analysis of the stripe-patterned Si/Si 1-xGex/Si(1 0 0) heterostructure indicates strain relaxation in the Si1-xGex layer and introduction of tensile strain into the capping Si layer by submicron stripe patterning. It is found that the degree of strain relaxation in the Si 1-xGex layer is strongly dependent on the stripe width, the capping Si layer thickness and the Si1- xGex layer thickness. Four-terminal resistivity measurement of the strain-controlled Si/Si1-xGe x/Si(1 0 0) heterostructure shows an increase of the electron and hole conductivity for the tensile strained capping Si layer and a decrease of the hole conductivity for the partially relaxed Si1- xGex layer.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry