TY - GEN
T1 - Strain and photovoltaic sensitivities of dumbbell-shape GnR-base sensors
AU - Goundar, Jowesh Avisheik
AU - Kudo, Takuya
AU - Zhang, Qinqiang
AU - Suzuki, Ken
AU - Miura, Hideo
N1 - Funding Information:
This research activity has been supported partially by Japanese special coordination funds for promoting science and technology, Japanese Grants-in-aid for Scientific Research, and Tohoku University. This research was supported partly by JSPS KAKENHI Grant Number JP16H06357.
Publisher Copyright:
Copyright © 2019 ASME.
PY - 2019
Y1 - 2019
N2 - The area-arrayed dumbbell-shape Graphene Nano-Ribbons (GNRs) were fabricated by using chemical vapor deposition and photolithography technologies. The electronic behavior of the fabricated GNR-FET structure was evaluated for its photonic properties with an incident light intensity of 1-mW. The 200-nm wide GNRs structure showed metallic properties, while those with the width of 40 nm showed semiconductive properties as was expected. The light-induced photocurrent was observed in all the fabricated GNRs structures. The average photocurrent observed in the 2-mm wide graphene structure was 3.3 A/m2 and that observed in the 40-nm wide area-arrayed GNRs structure was 261 A/m2, respectively. Based on this photocurrent, the external photosensitivity of the 40-nm wide GNRs structure was about 2.6 x 105 A/W.m2 and this value was much larger than that of conventional Si-base solar cells. In addition, the effect of strain on the resistivity of GNRs was measured. Uniaxial tensile strain was applied to the area-arrayed GNRs structures with the width from 200 nm to 40 nm. The gauge factor obtained from the GNRs with the width wider than 100 nm was about 3, and that with the width of 40 nm was about 160. Therefore, highly-sensitive strain sensors can be realized by using GNRs thinner than 70 nm.
AB - The area-arrayed dumbbell-shape Graphene Nano-Ribbons (GNRs) were fabricated by using chemical vapor deposition and photolithography technologies. The electronic behavior of the fabricated GNR-FET structure was evaluated for its photonic properties with an incident light intensity of 1-mW. The 200-nm wide GNRs structure showed metallic properties, while those with the width of 40 nm showed semiconductive properties as was expected. The light-induced photocurrent was observed in all the fabricated GNRs structures. The average photocurrent observed in the 2-mm wide graphene structure was 3.3 A/m2 and that observed in the 40-nm wide area-arrayed GNRs structure was 261 A/m2, respectively. Based on this photocurrent, the external photosensitivity of the 40-nm wide GNRs structure was about 2.6 x 105 A/W.m2 and this value was much larger than that of conventional Si-base solar cells. In addition, the effect of strain on the resistivity of GNRs was measured. Uniaxial tensile strain was applied to the area-arrayed GNRs structures with the width from 200 nm to 40 nm. The gauge factor obtained from the GNRs with the width wider than 100 nm was about 3, and that with the width of 40 nm was about 160. Therefore, highly-sensitive strain sensors can be realized by using GNRs thinner than 70 nm.
KW - Dumbbell-shape
KW - Graphene Nanoribbon
KW - Photosensitivity
KW - Piezoresistivity
UR - http://www.scopus.com/inward/record.url?scp=85078678808&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85078678808&partnerID=8YFLogxK
U2 - 10.1115/IMECE2019-11076
DO - 10.1115/IMECE2019-11076
M3 - Conference contribution
AN - SCOPUS:85078678808
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
BT - Micro- and Nano-Systems Engineering and Packaging
PB - American Society of Mechanical Engineers (ASME)
T2 - ASME 2019 International Mechanical Engineering Congress and Exposition, IMECE 2019
Y2 - 11 November 2019 through 14 November 2019
ER -
