Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections

Kenji Tsuda, Hajime Mitsuishi, Masami Terauchi, Kazuo Kawamura

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Local lattice strains of semiconductor devices have been so far examined using higher order Laue zone (HOLZ) line patterns of convergent-beam electron diffraction (CBED). Recently, strain analyses in highly strained regions near interfaces have been reported using split HOLZ line patterns. In the present paper, it is demonstrated for arsenic-doped silicon that the use of CBED rocking curves of low-order reflections provides a promising new tool for the determination of strain distributions of highly strained specimen areas. That is, the anomalous intensity increase in the CBED rocking curves of low-order reflections is explained using a model structure with a strain gradient in the electron beam direction, which is similar to the models used for the split HOLZ line patterns.

Original languageEnglish
Pages (from-to)57-61
Number of pages5
JournalJournal of Electron Microscopy
Volume56
Issue number2
DOIs
Publication statusPublished - 2007 Apr

Keywords

  • Arsenic-doped Si
  • Convergent-beam electron diffraction
  • Rocking curves of low-order reflections
  • Strain analysis

ASJC Scopus subject areas

  • Instrumentation

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