TY - JOUR
T1 - Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections
AU - Tsuda, Kenji
AU - Mitsuishi, Hajime
AU - Terauchi, Masami
AU - Kawamura, Kazuo
N1 - Funding Information:
The authors would like to thank Emeritus Prof. M. Tanaka for helpful discussions and critical reading of the manuscript and Mr. F. Sato for his careful maintenance of the JEM-2010FEF. The present study was supported by a Grant-in-Aid for Scientific Research C (no. 17510083) from the Japan Society for the Promotion of Science (JSPS).
PY - 2007/4
Y1 - 2007/4
N2 - Local lattice strains of semiconductor devices have been so far examined using higher order Laue zone (HOLZ) line patterns of convergent-beam electron diffraction (CBED). Recently, strain analyses in highly strained regions near interfaces have been reported using split HOLZ line patterns. In the present paper, it is demonstrated for arsenic-doped silicon that the use of CBED rocking curves of low-order reflections provides a promising new tool for the determination of strain distributions of highly strained specimen areas. That is, the anomalous intensity increase in the CBED rocking curves of low-order reflections is explained using a model structure with a strain gradient in the electron beam direction, which is similar to the models used for the split HOLZ line patterns.
AB - Local lattice strains of semiconductor devices have been so far examined using higher order Laue zone (HOLZ) line patterns of convergent-beam electron diffraction (CBED). Recently, strain analyses in highly strained regions near interfaces have been reported using split HOLZ line patterns. In the present paper, it is demonstrated for arsenic-doped silicon that the use of CBED rocking curves of low-order reflections provides a promising new tool for the determination of strain distributions of highly strained specimen areas. That is, the anomalous intensity increase in the CBED rocking curves of low-order reflections is explained using a model structure with a strain gradient in the electron beam direction, which is similar to the models used for the split HOLZ line patterns.
KW - Arsenic-doped Si
KW - Convergent-beam electron diffraction
KW - Rocking curves of low-order reflections
KW - Strain analysis
UR - http://www.scopus.com/inward/record.url?scp=35348905013&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35348905013&partnerID=8YFLogxK
U2 - 10.1093/jmicro/dfm006
DO - 10.1093/jmicro/dfm006
M3 - Article
C2 - 17928322
AN - SCOPUS:35348905013
VL - 56
SP - 57
EP - 61
JO - Microscopy (Oxford, England)
JF - Microscopy (Oxford, England)
SN - 2050-5698
IS - 2
ER -