Stoichiometry of III-V compounds

Jun ichi Nishizawa, Yutaka Oyama

Research output: Contribution to journalReview article

56 Citations (Scopus)

Abstract

Effects of stoichiometry control on electrical, optical and crystallographic features in III-V compounds are shown. The application of the optimum vapor pressure during annealing and crystal growth is shown to minimize the deviation from stoichiometric composition. Temperature-dependence of the optimum vapor pressure is also obtained. In view of the defect formation mechanism, existence of the stable interstitial arsenic atoms (IAs) in GaAs is emphasized. The mechanism of stoichiometry control is discussed on the basis of the equality of chemical potentials and the change of saturating solubility in the liquidus phase as a function of the vapor pressure.

Original languageEnglish
Pages (from-to)273-426
Number of pages154
JournalMaterials Science and Engineering R
Volume12
Issue number6-8
DOIs
Publication statusPublished - 1994 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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