Stoichiometry-dependent deep levels in p-type InP

Jun Ichi Nishizawa, Kiyoon Kim, Yutaka Oyama, Kén Suto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Photocapacitance measurement is applied to investigate the stoichiometry-dependent deep levels in p-type InP crystals doped with Zn prepared by 4 h annealing at 700°C under controlled phosphorus vapor pressure. Photocapacitance results reveal three dominant deep levels. A dominant deep level at 1.05 eV above the valence band is detected commonly before and after annealing, and the change of level densities is shown as a function of the phosphorus vapor pressure. Another two deep levels are also detected after annealing at 0.74 eV above the valence band and at 0.51 eV below the conduction band. In view of the deviation from the stoichometric composition of InP, possible origins of these levels and their optical transition mechanism are discussed.

Original languageEnglish
Pages (from-to)3151-3154
Number of pages4
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 1997 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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