The photocapacitance method is applied to investigate the stoichiometry-dependent deep levels in intentionally-undoped n-type InP crystals prepared by 4 h annealing at 700°C under controlled phosphorus vapor pressure. The present photocapacitance measurements reveal three dominant deep levels at 0.63 and 1.1 eV below the conduction band and 0.74 eV above the valence band, respectively. The phosphorus vapor pressure dependence of these level densities is also shown. The excitation photocapacitance results show the precise optical transition mechanism of these deep levels. In conjunction with the phosphorus vapor pressure dependence of the photocapacitance results, the defect formation mechanism is also discussed.
ASJC Scopus subject areas
- Physics and Astronomy(all)