Stoichiometry and Te related defect in n-Al0.3Ga0.7As

A. Murai, Yutaka Oyama, J. Nishizawa

Research output: Contribution to journalConference article

Abstract

Photocapacitance (PHCAP) and deep-level photoluminescence (PL) measurements were applied to the liquid phase epitaxially grown n-Al0.3Ga0.7As doped with Te. The PHCAP measurements revealed deep levels at Ec-0.5 eV, Ec-1.1 eV, and Ev+1.5 eV. After 1.5 eV monochromatic light preirradiation, the signal intensity with respect to the Ec-0.5 eV level was increased. Deep-level PL bands at 1.21 and 1.36 eV were also detected. The optical transition mechanism of the Te-related DX center is proposed based on these experimental results.

Original languageEnglish
Pages (from-to)251-254
Number of pages4
JournalJournal of Crystal Growth
Volume210
Issue number1
DOIs
Publication statusPublished - 2000 Mar 1
Event8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn
Duration: 1999 Sep 151999 Sep 18

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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