Stoichiometric constraint for dislocation loop growth in silicon carbide

Sosuke Kondo, Yutai Katoh, Akira Kohyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A stoichiometric constraint effects on Frank loop growth in β-SiC during irradiation were studied by ion beam irradiation, transmission electron microscopy, and calculation based on a kinetic model. Tilted-ion beam (5.1 MeV Si2+) was irradiated at 1000°C to induce lattice damage and to implant additional Si interstitial atoms simultaneously. Growth rate of the loops observed within the damaged region appeared to be positively correlated with the deposition rate of Si ions. Analysis based on a kinetic model showed that a small amount of deposited excess Si substantially increased the net flux of Si interstitials, which believed to govern the loop growth rate. The experimental and computational results confirm the stoichiometric constraint effect on Frank loop growth in SiC, and that availability of Si interstitial atoms determines the Frank loop growth rate in most irradiation conditions.

Original languageEnglish
Title of host publicationMechanical Properties and Performance of Engineering Ceramics and Composites III - A Collection of Papers Presented at the 31st International Conference on Advanced Ceramics and Composites
Pages91-99
Number of pages9
Edition2
Publication statusPublished - 2008 Dec 22
Externally publishedYes
Event31st International Conference on Advanced Ceramics and Composites - Daytona Beach, FL, United States
Duration: 2007 Jan 212007 Jan 26

Publication series

NameCeramic Engineering and Science Proceedings
Number2
Volume28
ISSN (Print)0196-6219

Other

Other31st International Conference on Advanced Ceramics and Composites
CountryUnited States
CityDaytona Beach, FL
Period07/1/2107/1/26

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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