@inproceedings{79a767e5e10a4c989540f728a1c529d8,
title = "Stochastic behavior-considered VLSI CAD environment for MTJ/MOS-hybrid microprocessor design",
abstract = "A new VLSI CAD environment considering stochastic behavior of MTJ devices is proposed for the evaluation of not only the performance but also the reliability of MTJ/MOS-hybrid logic LSI. The proposed simulator allows users to support the design of MTJ/MOS-hybrid LSI by RTL/gate-level hardware description, whose simulation considering stochastic switching behavior of MTJ device can be done by analog-mixed-signal simulation with de-facto standard EDA tools. Through the design of a nonvolatile logic LSI based on a general purpose 32-bit microprocessor, the impact of the proposed design flow is demonstrated.",
keywords = "design environment, logic-in-memory, magnetic tunnel junction, nonvolatile, stochastic behavior",
author = "M. Natsui and A. Tamakoshi and A. Mochizuki and H. Koike and H. Ohno and T. Endoh and T. Hanyu",
year = "2016",
month = jul,
day = "29",
doi = "10.1109/ISCAS.2016.7538938",
language = "English",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1878--1881",
booktitle = "ISCAS 2016 - IEEE International Symposium on Circuits and Systems",
note = "2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 ; Conference date: 22-05-2016 Through 25-05-2016",
}