STM/STS Studies of the Structural Phase Transition in the Growth of Ultra-Thin Bi Films on Si(111)

J. T. Sadowski, T. Nagao, M. Saito, A. Oreshkin, S. Yaginuma, S. Hasegawa, T. Ohno, T. Sakurai

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)

    Abstract

    Growth of thin metal films on semiconductors has been always an important subject for extensive experimental and theoretical studies. As the applicability of well-ordered nanostructures in electronic applications depends strongly on their size and distribution, it is necessary to understand the processes that govern the growth of such structures. In this paper we present the results of investigation of the room temperature growth of thin Bi film on Si(111). In our study we clarified that rotationally disordered, pseudo-cubic Bi{012} islands with uniform height of ≈ 13 Å are formed in the initial stage of Bi film growth. With increase in the amount of bismuth on the surface, islands interconnect maintaining however their uniform height. This process is further accompanied by the unique and unexpected structural phase transition of the {012} film into a hexagonal Bi(001) film.

    Original languageEnglish
    Pages (from-to)381-387
    Number of pages7
    JournalActa Physica Polonica A
    Volume104
    Issue number3-4
    DOIs
    Publication statusPublished - 2003
    EventProceedings of the 3rd International Symposium Scanning Probe Spectroscopy and Related Methods - Poznan, Poland
    Duration: 2003 Jul 162003 Jul 19

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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