STM/STS studies of the initial stage of growth of ultra-thin Bi films on 7 × 7-Si(111) surface

A. I. Oreshkin, J. T. Sadowski, T. Nagao, S. Yaginuma, Y. Fujikawa, T. Sakurai, M. Saito, T. Ohno

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    The results of investigation of the room temperature growth of thin Bi films on Si(111)-7 × 7 are present. In the initial stage of Bi film growth the rotationally disordered, pseudo-cubic, Bi{012} islands with a uniform height of 13 Åare formed. With increasing bismuth on the surface, islands interconnect, maintaining however their uniform height, and structural phase transition of the {012} film into a hexagonal Bi(001) film takes place.

    Original languageEnglish
    Pages (from-to)399-401
    Number of pages3
    JournalInternational Journal of Nanoscience
    Volume6
    Issue number5
    DOIs
    Publication statusPublished - 2007 Oct 1

    Keywords

    • Growth
    • STM
    • Semiconductors

    ASJC Scopus subject areas

    • Biotechnology
    • Bioengineering
    • Materials Science(all)
    • Condensed Matter Physics
    • Computer Science Applications
    • Electrical and Electronic Engineering

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