STM/STS measurements of two-dimensional electronic states in magnetic fields at epitaxially grown InAs(111)A surfaces

Y. Niimi, K. Kanisawa, H. Kojima, H. Kambara, Y. Hirayama, S. Tarucha, Hiroshi Fukuyama

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3 Citations (Scopus)

Abstract

The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs substrate was studied at very low temperatures in magnetic fields up to 6 T by scanning tunneling microscopy and spectroscopy. We observed a series of peaks, associated with Landau quantization of the two-dimensional electron system (2DES), in the tunnel spectra just above the subband energy (-80 meV) of the 2DES. The intervals between the peaks are consistent with the estimation from the effective mass of the 2DES at the InAs surface. In a wider energy range, another type of oscillation which was independent of magnetic field was also observed. This oscillation can be explained by the energy dependence of the transmission probability of the tunneling current through the Schottky barrier formed at the interface between the InAs film and GaAs substrate.

Original languageEnglish
Article number174
Pages (from-to)874-878
Number of pages5
JournalJournal of Physics: Conference Series
Volume61
Issue number1
DOIs
Publication statusPublished - 2007 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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